Douglas Hall
Associate Professor
Ph.D., University of Illinois at Urbana-Champaign, 1991
Research Interests: Optoelectronics device characterization, fabrication, and materials studies.
Courses: Photonics, Photonics Lab, Photonics Lab, Photonics
Prof. Hall's compound semiconductor materials and device research is focused on understanding and developing new applications of native oxides for optoelectronic, electronic, and integrated optics devices. Presently, GaAs-based optoelectronic devices, optical waveguides and electronic devices are being designed, fabricated and characterized. New approaches are being explored for realizing low-loss heterostructure waveguides and photonic integrated circuits for wavelength division multiplexing (WDM) applications in optical communications. Research on the atomic-scale morphology, interface charge-trapping characteristics, and scalability of InAlP native oxides is underway in pursuit of a viable metal-oxide-(compound) semiconductor (MOS) electronic gate oxide, akin to silicon dioxide on silicon. Hall's research also includes fundamental studies of compound semiconductor native oxide properties and related processing and integration issues.
PRINTER FRIENDLY VERSION
Associate Professor
Ph.D., University of Illinois at Urbana-Champaign, 1991
Research Interests: Optoelectronics device characterization, fabrication, and materials studies.
Courses: Photonics, Photonics Lab, Photonics Lab, Photonics
Prof. Hall's compound semiconductor materials and device research is focused on understanding and developing new applications of native oxides for optoelectronic, electronic, and integrated optics devices. Presently, GaAs-based optoelectronic devices, optical waveguides and electronic devices are being designed, fabricated and characterized. New approaches are being explored for realizing low-loss heterostructure waveguides and photonic integrated circuits for wavelength division multiplexing (WDM) applications in optical communications. Research on the atomic-scale morphology, interface charge-trapping characteristics, and scalability of InAlP native oxides is underway in pursuit of a viable metal-oxide-(compound) semiconductor (MOS) electronic gate oxide, akin to silicon dioxide on silicon. Hall's research also includes fundamental studies of compound semiconductor native oxide properties and related processing and integration issues.
PRINTER FRIENDLY VERSION
contact info
phone: (574) 631-8631
e-mail: send email
office:260 Fitzpatrick Hall http://www.nd.edu/~opto
Semiconductors I: Fund.Rec.
Semiconductors I: Fund.Rec.
Chris Seibert
Wangqing Yuan
phone: (574) 631-8631
e-mail: send email
office:
current courses
Semiconductors I: Fund.Semiconductors I: Fund.Rec.
Semiconductors I: Fund.Rec.
graduate students
Mohammad Ashraf Ali KhanChris Seibert
Wangqing Yuan